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Resolution characterization of a novel silicone-based positive photoresistTANAKA, A; BAN, H; IMAMURA, S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 572-575, issn 0734-211X, 4 p.Article

Electron beam resist system ― A critical review of recent developmentsWATTS, M. P. C.Solid state technology. 1984, Vol 27, Num 2, pp 111-113, issn 0038-111XArticle

Positive photoresist polymerization through pulsed photomagnetic curingRUGGERIO, P. A.Solid state technology. 1984, Vol 27, Num 3, pp 165-169, issn 0038-111XArticle

A positive-working alkaline developable photoresist based on partially tert-boc-protected calix[4]resorcinarene and a photoacid generatorYOUNG-GIL, Kwon; JIN BAEK KIM; FUJIGAYA, Tsuyohiko et al.Journal of material chemistry. 2002, Vol 12, Num 1, pp 53-57, issn 0959-9428Article

Bake effects in positive photoresistBATCHELDER, T; PIATT, J.Solid state technology. 1983, Vol 26, Num 8, pp 211-217, issn 0038-111XArticle

CHEMICAL IMPURITIES AND STRUCTURAL IMPERFECTIONS IN SEMICONDUCTOR SILICON. IHUFF HR.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 2; PP. 89-95; BIBL. 43 REF.Article

A NEW PACKAGE-RELATED FAILURE MECHANISM FOR LEADLESS CERAMIC CHIP CARRIERS (LC-3S) SOLDER-ATTACHED TO ALUMINA SUBSTRATESHOWARD RT; SOBECK SW; SANETRA C et al.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 2; PP. 115-122; BIBL. 16 REF.Article

A novel chemically amplified positive deep UV photoresist with significantly reduced sensitivity to environmental contaminationCHATTERJEE, S; JAIN, S; LU, P. H et al.Polymer engineering and science. 1992, Vol 32, Num 21, pp 1571-1577, issn 0032-3888Conference Paper

Effet de photogravure des résists positifs à l'aide d'un rayonnement impulsionnel X d'un plasma de laserBOJKO, V. A; VAJNER, A. YA; KIREEVA, S. A et al.Žurnal tehničeskoj fiziki. 1983, Vol 53, Num 7, pp 1402-1403, issn 0044-4642Article

Fluoropolymer-based resist materials for 157-nm lithographyTORIUMI, M; SHIDA, N; YAMAZAKI, T et al.Microelectronic engineering. 2002, Vol 61-62, pp 717-722, issn 0167-9317Conference Paper

New concept of contrast enhancement of resist and its application to positive-type resistYOSHIDA, Y; KUBOTA, S; ISHIBASHI, K et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 4, pp 1335-1338, issn 0013-4651Article

Evaluation of onium salt cationic photoinitiators as novel dissolution inhibitor for novolac resinITO, H; FLORES, E.Journal of the Electrochemical Society. 1988, Vol 135, Num 9, pp 2322-2327, issn 0013-4651Article

Characterization of positive photoresist performanceBABU, S. V; SRINIVASAN, V.Journal of imaging technology. 1985, Vol 11, Num 4, pp 168-174, issn 0747-3583Article

DPN-generated nanostructures as positive resists for preparing lithographic masters or hole arraysSALAITA, Khalid S; SEUNG WOO LEE; GINGER, David S et al.Nano letters (Print). 2006, Vol 6, Num 11, pp 2493-2498, issn 1530-6984, 6 p.Article

Study of cross-linking reactions in negative-type thick-film resistsSENSU, Yoshihisa; SEKIGUCHI, Atsushi; KONO, Yoshiyuki et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6196-2, 2Vol, Part 2, 61533S.1-61533S.12Conference Paper

A new positive resist based on poly(4-hydroxystyrene) for KrF excimer laser lithographyKIM, Ilho; PARK, Sang-Jin; LEE, Si-Hyung et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 2000, Vol 349, pp 179-182, issn 1058-725XConference Paper

Approach for VUV positive resists using photodecomposable polymersKISHIMURA, Shinji; KATSUYAMA, Akiko; SASAGO, Masaru et al.SPIE proceedings series. 2000, pp 347-356, isbn 0-8194-3617-8Conference Paper

Photolacke für die Deep-UV-Lithographie = Photoresist for deep-UV lithographyFUNHOFF, D; SCHWALM, R.Farbe + Lack. 1992, Vol 98, Num 3, pp 171-175, issn 0014-7699Article

Chemically amplified positive resist for the next generation photomask fabricationKATOH, K; KASUYA, K; ARAI, T et al.SPIE proceedings series. 1999, pp 577-586, isbn 0-8194-3468-X, 2VolConference Paper

POSITIVE RESIST MATERIAL REQUIREMENTS FOR VLSI DEVICE FABRICATION. IIELLIOTT DJ.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 12; PP. 91-95; BIBL. 11 REF.Article

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Characterization of a positive resist and the application of proximity effect correction in electron-beam direct writeTAN, Z. C. H; STANDIFORD, K; LEM, H. Y et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3099-3103, issn 1071-1023Conference Paper

A new method of evaluation of the effect of electron beam and developing process on positive polymeric resistsPELZBAUER, Z; WAGNER, R.Journal of applied polymer science. 1984, Vol 29, Num 4, pp 1427-1432, issn 0021-8995Article